BCV26

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors FEATURES High current (max. 500 mA) Low voltage (max. 60 V) Very high DC current gain (min. 10000). APPLICATIONS Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. MARKING 1 2 BCV26; BCV46 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 3 TR1 TR2 2 MAM299 TYPE NUMBER BCV26 BCV46 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) FD∗ FE∗ Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV26 BCV46 VCES collector-emitter voltage BCV26 BCV46 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 −30 −60 −10 −500 −800 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −40 −80 V V MIN. MAX. UNIT 1999 Apr 08 2 Philips Semiconductors Product specific...