MSP0650D

MSP0650D -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● Load switch PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP0650D MSP0650D TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit -6...