MSP0315D
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Applic...
