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MSP2303 Dataheets PDF



Part Number MSP2303
Manufacturers MORESEMI
Logo MORESEMI
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MSP2303 DatasheetMSP2303 Datasheet (PDF)

MSP2303 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -2.0A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● PWM applications ● Load switch ● Power management PIN Configuration Marking and pin assignment D G SOT-23 top view S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Pack.

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MSP2303 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -2.0A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● PWM applications ● Load switch ● Power management PIN Configuration Marking and pin assignment D G SOT-23 top view S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP2303 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -30 ±20 -2.0 -10 1.0 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambi.


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