MSP3415E

MSP3415E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ● PWM application ● Load switch Marking and pin Assignment PIN Configuration SOT-23 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP3415E SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±10 -4 -30 1.4 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Juncti...