P-Channel Enhancement Mode Power MOSFET
MSP2305
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VG...
Description
MSP2305
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM applications ● Load switch ● Power management
PIN Configuration
Lead Free
Marking and pin assignment D
G
SOT-23 top view
S Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
S5
MSP2305
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25℃
Continuous Drain Current
TC =70℃ TA =25℃
ID
TA =70℃
Drain Current -Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20 ±12 -4.1 -3.2 -3 -2.3 -15 1.7 -55 To 150
Unit
V V
A
A W ℃
...
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