P-Channel Enhancement Mode Power MOSFET
MSP0203
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS...
Description
MSP0203
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●PWM applications ●Load switch ●Power management
Lead Free
Marking and pin Assignment
PIN Configuration
D G
SOT-23 top view
S Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP0203
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current -Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20 ±12 -3 -10
1 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (No...
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