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BCR555

Part Number	BCR555
Manufacturer	Infineon Technologies AG
Description	PNP Silicon Digital Transistor
Published	Mar 23, 2005
Detailed Description	PNP Silicon Digital Transistor • Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) • Pb-free (RoHS compliant) package • Qua...
Datasheet	BCR555 PDF File

Overview

PNP Silicon Digital Transistor • Built in bias resistor (R1= 2.
2 kΩ, R2= 10 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR555 32 1 C 3 R1 R2 1 B Type BCR555 2 E EHA07183 Marking XDs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg 50 50 20 5 500 330 150 -65 .
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150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refer ...

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