BCR523

BCR523 NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit, 3 driver circuit
Built in bias resistor (R1=1k, R2=10k) C 3 2 1 VPS05161 R1 R2 1 B 2 E EHA07184 Type BCR523 Maximum Ratings Parameter Marking XGs 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 12 500 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR523 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO typ. max. Unit 50 50 70 0.3 0.4 0.7 0.09 1 0.1 100 0.72 0.3 1 1.4 1.3 0.11 V nA mA V k
- AC Characteristics Transition frequency IC = 50 mA, VCE = ...