BCR3KM

MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ŒŽ 2.6 ± 0.2 V Measurement point of case temperature  .................................................................. 3A q VDRM ...................................................... 400V / 600V q IFGT ! , IRGT ! , I RGT # ................... 15mA (10mA) V2 q IT (RMS) q UL Œ Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL Recognized : File No. E80271 TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol V DRM V DSM Parameter Repetitive peak off-state voltageV 1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltageV1 Symbol I T (RMS) I TSM I 2t PGM PG (AV) VGM I GM Tj T stg — Viso Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc=111°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 3 30 3.7 3 0.3 6 0.5 –40 ~ +125 –40 ~ +125 2.0 Unit A A A2s W W V A °...