BCR39PN
NPN/PNP Silicon Digital Transistor Array
4
Switching circuit, inverter, interface circuit,
5 6
driver circu...
BCR39PN
NPN/
PNP Silicon Digital
Transistor Array
4
Switching circuit, inverter, interface circuit,
5 6
driver circuit
Two (galvanic) internal isolated
NPN/
PNP
Transistors in one package
Built in bias resistor (R1 = 22k)
2 1
3
VPS05604
Tape loading orientation
C1 B2 5 E2 4
Top View 654 W1s 123 Direction of Unreeling
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
6
R1 TR1
R1 TR2
Position in tape: pin 1 opposite of feed hole side
EHA07193
1 E1
2 B1
3 C2
EHA07290
Type BCR39PN
Maximum Ratings Parameter
Marking W3s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 30 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCR39PN
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 ...
