High Performance Isolated Collector Silicon Bipolar Transistor
Description
High Performance Isolated Collector Silicon Bipolar Transistor
Technical Data
HBFP-0420
Features
Ideal for High Gain, Low Noise Applications
Transition Frequency fT = 25 GHz
Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA
P1dB of 12 dBm at 2 V and 20 mA
Can be Used Without Impedance Matching
Applic...
