BCR183...
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR183...
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR183/F/L3 BCR183T/W
C 3
BCR183S BCR183U
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W
Marking WMs WMs WM WMs WMs WMs WMs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Nov-17-2003
BCR183...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR183, TS ≤ 102°C BCR183F, TS ≤ 128°C BCR183L3, TS ≤ 135°C BCR183S, T S ≤ 115°C BCR183T, TS ≤ 109C BCR183U, TS ≤ 118°C BCR183W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 20 100 200 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105
°C
Unit K/W
2
Nov-17-2003
BCR183...
Electrical Characteristics at...