BCR169.../SEMB3
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
BCR169.../SEMB3
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k Ω) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR169/F/L3 BCR169T/W
C 3
BCR169S/U SEMB3
C1 6 B2 5 E2 4
R1
R1 TR1
R1 TR2
1 B
2 E
EHA07180
1 E1
2 B1
3 C2
EHA07266
Type
Marking
Pin Configuration
Package
BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3
WSs WSs WS WSs WSs WSs WSs WS
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-18-2004
BCR169.../SEMB3
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR169, TS ≤ 102°C BCR169F, TS ≤ 128°C BCR169L3, TS ≤ 135°C BCR169S, T S ≤ 115°C BCR169T, TS ≤ 109°C BCR169U, TS ≤ 118°C BCR169W, TS ≤ 124°C SEMB3, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 15 100 200 250 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 1...