BCR164L3

BCR164... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ , R2 = 10kΩ ) BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F* BCR164L3* BCR164T* * Preliminary Maximum Ratings Parameter U6s U6 U6s 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR164F, TS ≤ 128°C BCR164L3, TS ≤ 135°C BCR164T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 ... 150 °C Sep-03-2003 BCR164... Thermal Resistance Parameter Junction - soldering point1) BCR164F BCR164L3 BCR164T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit - Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0.5 0.5 3.2 0.42 - 4.7 0.47 160 3 100 520 0.3 1.1 1.4 6.2 0.52 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA...