BCR149...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR149...
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47kΩ)
BCR149F/L3 BCR149T
C 3
R1
1 B
2 E
EHA07264
Type
Marking
Pin Configuration
Package
BCR149F* BCR149L3* BCR149T* * Preliminary
Maximum Ratings Parameter
UAs UA UAs
1=B 1=B 1=B
2=E 2=E 2=E
3=C 3=C 3=C
-
-
-
TSFP-3 TSLP-3-4 SC75
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 50 70 250 250 250
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR149F, TS ≤ 128°C BCR149L3, TS ≤ 135°C BCR149T, TS ≤ 109°C Junction temperature Storage temperature
1
mA mW
Tj Tstg
150 -65 ... 150
°C
Nov-04-2003
BCR149...
Thermal Resistance Parameter Junction - soldering point1) BCR149F BCR149L3 BCR149T Symbol RthJS Value
≤ 90 ≤ 60 ≤ 165
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1
50 5 120 0.4 0.5 32
-
47
150 3
100 630 0.3 0.8 1.5 62
kΩ
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
nA V
DC current gain2)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VC...