BCR139F

BCR139... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ) BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139 BCR139F BCR139L3 BCR139T WYs WYs WY WYs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 1 Sep-03-2003 BCR139... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR139, TS ≤ 102°C BCR139F, TS ≤ 128°C BCR139L3, TS ≤ 135°C BCR139T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR139 BCR139F BCR139L3 BCR139T 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 30 100 200 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 °C Unit K/W 2 Sep-03-2003 BCR139... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.4 0.5 15 22 100 630 0.3 0.8 1.1 29 kΩ Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0...