NCE30P50G

http://www.ncepower.com Pb Free Product NCE30P50G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Battery and loading switching Marking and pin assignment 100% UIS TESTED! DFN 5x6 EP top view Package Marking and Ordering Information Device Marking Device Device Package NCE30P50G NCE30P50G DFN 5x6 EP Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Volt...