BCR119T

BCR119.../SEMH7 NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR119/F/L3 BCR119T/W C 3 BCR119S SEMH7 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07264 1 E1 2 B1 3 C2 EHA07265 Type BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W SEMH7 Marking WKs WKs WK WKs WKs WKs WK 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-17-2004 BCR119.../SEMH7 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage DC collector current Total power dissipationBCR119, TS ≤ 102°C BCR119F, TS ≤ 128°C BCR119L3, TS ≤ 135°C BCR119S, T S ≤ 115°C BCR119T, TS ≤ 109°C BCR119W, TS ≤ 124°C SEMH7, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W SEMH7 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IE Ptot Value 50 50 5 15 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 °C Unit K/W 2 May-17-2004 BCR119.../SEMH7 Electrical Characteristics at TA = 25°C, u...