BCR119.../SEMH7
NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
BCR119.../SEMH7
NPN silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR119/F/L3 BCR119T/W
C 3
BCR119S SEMH7
C1 6 B2 5 E2 4
R1
R1 TR1
R1 TR2
1 B
2 E
EHA07264
1 E1
2 B1
3 C2
EHA07265
Type BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W SEMH7
Marking WKs WKs WK WKs WKs WKs WK 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-17-2004
BCR119.../SEMH7
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage DC collector current Total power dissipationBCR119, TS ≤ 102°C BCR119F, TS ≤ 128°C BCR119L3, TS ≤ 135°C BCR119S, T S ≤ 115°C BCR119T, TS ≤ 109°C BCR119W, TS ≤ 124°C SEMH7, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W SEMH7
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IE Ptot
Value 50 50 5 15 100 200 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300
°C
Unit K/W
2
May-17-2004
BCR119.../SEMH7
Electrical Characteristics at TA = 25°C, u...