BCR116.../SEMH13
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built...
BCR116.../SEMH13
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=47kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR116/F/L3 BCR116T/W
C 3
BCR116S SEMH13
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type
Marking
Pin Configuration
Package
BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W SEMH13
WGs WGs WG WGs WGs WGs WG
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-17-2004
BCR116.../SEMH13
Maximum Ratings Parameter Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value Unit
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR116, TS ≤ 102°C BCR116F, TS ≤ 128°C BCR116L3, TS ≤ 135°C BCR116S, T S ≤ 115°C BCR116T, TS ≤ 109°C BCR116W, TS ≤ 124°C SEMH13, TS ≤ 75°C Junction temperature Storage temperature
Thermal Resistance Parameter Junction - soldering point1)
50 50 5 15 100 200 250 250 250 250 250 250
V
mA mW
Tj T stg Symbol RthJS
150 -65 ... 150
Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300
°C
Unit K/W
BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W SEMH13
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
May-17-2004
BCR116.../SEMH13
E...