BCR114...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR114...
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 =4.7kΩ, R2 =10kΩ)
BCR114/F BCR114L3/T
C 3
R1 R2
1 B
2 E
EHA07184
Type BCR114 BCR114F BCR114L3 BCR114T
Marking U4s U4s U4 U4s 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75
1
Aug-29-2003
BCR114...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR114, TS ≤ 102°C BCR114F, TS ≤ 128°C BCR114L3, TS ≤ 135°C BCR114T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR114 BCR114F BCR114L3 BCR114T
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 15 100 200 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165
°C
Unit K/W
2
Aug-29-2003
BCR114...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 30 0.5 0.5 3.2 0.42 -
4.7 0.47 160 3
100 520 0.3 1.1 1.4 6.2 0.52 kΩ
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-bas...