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BCR10UM Dataheets PDF



Part Number BCR10UM
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description TRIAC
Datasheet BCR10UM DatasheetBCR10UM Datasheet (PDF)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR10UM OUTLINE DRAWING Dimensions in mm 2.8 ± 0.2 10.2 4.5 1.27 15.5 V φ3.8 ± 0.2 13.0 MIN 4.2 MAX TYPE NAME VOLTAGE CLASS 1.4 0.8 2.54 0.6 2.6 ± 0.4 2.54 ŒŽ V Measurement point of ¡IT (RMS) 10A ¡VDRM ..400V/600V ¡IFGT !, I RGT !, IRGT # ....

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR10UM OUTLINE DRAWING Dimensions in mm 2.8 ± 0.2 10.2 4.5 1.27 15.5 V φ3.8 ± 0.2 13.0 MIN 4.2 MAX TYPE NAME VOLTAGE CLASS 1.4 0.8 2.54 0.6 2.6 ± 0.4 2.54 ŒŽ V Measurement point of ¡IT (RMS) ...................................................................... 10A ¡VDRM ..............................................................400V/600V ¡IFGT !, I RGT !, IRGT # ........................................... 15mA ¡Viso ........................................................................ 1500V APPLICATION Light dimmer  Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL TO-220 Œ MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360° conduction, Tc=93 °C V 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 10 100 41.6 5 0.5 10 2 –40 ~ +125 –40 ~ +125 4.5 case temperature Unit A A A2s W W V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case 2.3 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) Gate non-trigger voltage Thermal resistance Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V3 V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=15A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — Typ. — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 15 15 — 2.7 Unit mA V V V V mA mA mA V °C/W V2. Measurement using the gate trigger characteristics measurement circuit. V3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. V4. The contact thermal resistance R th (c-f) in case of greasing is 1.0°C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 101 7 5 3 2 100 7 5 3 2 Tj = 125°C Tj = 25°C 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A GATE VOLTAGE (V) VGT = 1.5V GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 2 100 7 5 3 2 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IFGT I , IRGT I , IRGT III 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 32 24 360° CONDUCTION 20 RESISTIVE, INDUCTIVE 16 LOADS 12 8 4 0 0 2 4 6 8 10 12 14 16 CASE TEMPERATURE (°C) 28 140 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4 6 0 2 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2.


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