BCR108L3

BCR108.../SEMH10 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 =2.2kΩ, R2=47kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR108/F/L3 BCR108T/W C 3 BCR108S SEMH10 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W SEMH10 Marking WHs WHs WH WHs WHs WHs WH 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR108.../SEMH10 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR108, TS ≤ 102°C BCR108F, TS ≤ 128°C BCR108L3, TS ≤ 135°C BCR108S, T S ≤ 115°C BCR108T, TS ≤ 109°C BCR108W, TS ≤ 124°C SEMH10, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W SEMH10 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 °C Unit K/W 2 Jun-14-2004 BCR108.../SEMH10 Electrical Cha...