BCR103L3

BCR103... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR103/F BCR103L3/T C 3 BCR103U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR103 BCR103F BCR103L3 BCR103T BCR103U Marking WAs WAs WA WAs WAs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR103... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR103, TS ≤ 102°C BCR103F, TS ≤ 128°C BCR103L3, TS ≤ 135°C BCR103T, TS ≤ 109°C BCR103U, TS ≤ 118°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR103 BCR103F BCR103L3 BCR103T BCR103U 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 °C Unit K/W 2 Aug-29-2003 BCR103... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB...