BCR101T

BCR101... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ ) BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F* BCR101L3* BCR101T* *Preliminary Maximum Ratings Parameter UCs UC UCs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 50 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR101F, TS ≤ 128°C BCR101L3, TS ≤ 135°C BCR101T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 ... 150 °C Nov-27-2003 BCR101... Thermal Resistance Parameter Junction - soldering point1) BCR101F BCR101L3 BCR101T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0.5 1 70 0.9 - 100 1 100 3 100 75 0.3 1.8 3 130 1.1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 5 mA, IB = 0.25 mA Input o...