BCP72

BCP 72 PNP Silicon AF Power Transistor Preliminary data For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Type BCP 72 Marking Ordering Code Pin Configuration PAs Q627021=E 2=C 3=E 4=B 5=C Package SOT-23-5 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Symbol Values 15 15 5 3 6 200 500 1.7 150 - 65 ... + 150 W °C mA A Unit V VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 55 ≤ 30 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Dec-04-1996 BCP 72 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 0.15 100 20 100 V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 15 IC = 100 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO nA µA nA 25 85 50 475 V mV 1.2 VCB = 15 V, IE = 0 , TA = 25 °C VCB = 15 V, IE = 0 , TA = 150 °C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V Collector-emitter saturation voltage 1) VCEsa...