BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Rev. 7 — 12 October 2011
Product data sheet
1. Product pr...
BCP69; BC869; BC69PA
20 V, 2 A
PNP medium power
transistors
Rev. 7 — 12 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power
transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
BCP69
SOT223
BC869
SOT89
BC69PA
SOT1061
JEITA SC-73 SC-62 -
[1] Valid for all available selection groups.
JEDEC TO-243 -
NPN complement
BCP68 BC868 BC68PA
1.2 Features and benefits
High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications
Linear voltage
regulators High-side switches Battery-driven devices
Power management MOSFET drivers Amplifiers
1.4 Quick reference data
Table 2. Symbol VCEO IC ICM
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current single pulse; tp 1 ms
Min Typ Max Unit - - 20 V - - 2 A - - 3 A
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A
PNP medium power
transistors
Table 2. Symbol hFE
Quick reference data …continued
Parameter
Conditions
DC current gain hFE selection -16 hFE selection -25
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 500 mA
[1] Pulse test: tp 300 s; = 0.02.
2. Pinning information
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