4A,600V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL4N60
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
TO-220AB
Value 600 ±30
Units V V
IAR Avalanc.