N-Channel Power Mosfet
3A,600V N-Channel Power Mosfet
FEATURES
VDS = 600V , ID = 3A RDS(ON) =3.6Ω@ VGS = 10V Ultra low gate charge ( ty...
Description
3A,600V N-Channel Power Mosfet
FEATURES
VDS = 600V , ID = 3A RDS(ON) =3.6Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC )
Pb
Lead-free
Ultra low gate charge ( typical 10 nC )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL3N60
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS EAR dv/dt
PD
RθJA
TJ
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
TOPR, Tstg Operating and Storage Temperature
TO-220AB
Value 600 ±30
3.0
12 200 7.5 4.5 75 70 +150
-55 to +150
Units V V A A mJ V/ns W ℃/W ℃ ℃
X098 Rev.A
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1
Production specification
3A,600V N-Channel Power Mosfet
BL3N60
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unl...
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