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4A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL4N65
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS EAR dv/dt
PD
RθJA
TJ
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
TOPR, Tstg Operating and Storage Temperature
TO-220AB
Value 650 ±30
4.0
16 260 10.6 4.5 36 62.5 +150
-55 to +150
Units V V A A mJ V/ns W ℃/W ℃ ℃
X166 Rev.A
www.gmesemi.com
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Production specification
4A,650V N-Channel Power Mosfet
BL4N65
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless.