BL2N65D

2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.8Ω@VGS=10V. Pb  Ultra Low gate charge (typical 9.0nC) Lead-free  Low reverse transfer capacitance (Crss = typical 5.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL2N65I/2N65D TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDM VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage (TC=25℃) 650 2.0 8.0 ±30 V A A V IAR Avalanche Current (Note2) 2.0 A EAR EAS dv/dt Avalanche Energy Repetitive(Note 2) 4.5 Avalanche Energy Single Pulse(Note 3) 140 Peak Diode Recovery dv/dt (Note4) 4.5 mJ mJ V/ns PD Power Dissipation (TC=25℃) 44 W TJ Junction Temperature +150 ℃ TSTG Storage Temperature -55 ~ +150 ℃ θJA Thermal Resistance Junction-Ambient 50 ℃/W θJc Therm...