Production specification
N-Channel Enhancement Mode Field Effect Transistor BL9N20
FEATURES
TrenchFET Power MOSFETS....
Production specification
N-Channel Enhancement Mode Field Effect
Transistor BL9N20
FEATURES
TrenchFET Power MOSFETS. 175℃ Junction Temperature. New Low Thermal Resistance Package.
Pb
Lead-free
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
VDS Drain-Source Voltage
200
VGS Gate -Source Voltage
±20
ID
Continuous Drain Current(TJ=175℃)
TC=25℃ TC=125℃
9 5.2
IDM Pulsed Drain Current IAR Avalanche Current
10 7
PD
Power Dissipation at TC=25℃ TA=25℃(Note1)
EAS RthJA
Single Pulse Avalanche Energy L = 0.1 Mh(Note2)
Junction-to-Ambient (PCB Mount)c
RthJC
Junction-to-Case (Drain)
Tj Tstg
Operating Junction and StorageTem-perature Range
Note:1.When mounted on 1“ square PCB(FR-4 material) 2.Duty cycle≤1%.
60 3.75 2.45 40 2.5 -55 to +175
Unit V V
A
A A
W
mJ ℃/W ℃/W ℃
X074 Rev.A
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Production specification
N-Channel Enhancement Mode Field Effect
Transistor B...
