BL8N60

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N60 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 V Continuous Drain current TC=25℃ 7.5 A ID Continuous Drain current TC=100℃ 4.6 A EAS Single Pulse Avalanche Energy(Note2) 230 mJ EAR Avalanche Energy,Repetitive(Note1) 14.7 mJ IAR Avalanche Current(Note2) 7.5 A ISD Continuous Drain-Source Current 7.5 A ISM Pulsed Drain-Source Current 30 A dv/dt Peak Diode Recovery dv/dt(Note4) 4.5 V/ns Power Dissipation PD Derating Fcator above 25℃ 147 W 0.32 W/℃ RθJC Junction-to-C...