BL5N50

Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50 FEATURES  Low on-resistance.  Low leakage current.  High speed switching.  Low gate charge.  Avalanche ratings. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS ID ID(pulse) IDR IDR(pulse) IAP Gate -Source Voltage Drain Current Drain Current(pulsed) Note1 Body-drain diode reverse drain current Body-drain diode reverse drain peak current(pulsed) Note1 Avalanche current Note3 ±30 5 20 5 20 5 V A A A A A Pch Channel dissipation Note2 30 W RθJA Channel to case Thermal Impedance 4.17 ℃/W Tch Channel temperature 150 ℃ Tstg StorageTemperature Range Note: 1.PW ≤10us, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Tch 150°C -55 to +150 ℃ X073 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50 ELECTRICAL CHAR...