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BL3435

GME
Part Number BL3435
Manufacturer GME
Description P-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES  Electrostatic Sensitive ...
Datasheet PDF File BL3435 PDF File

BL3435
BL3435

Overview
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES  Electrostatic Sensitive Devices.
 VDS (V) =- 20V  ID = -3.
5 A(VGS = -4.
5V)  RDS(ON) < 70mΩ (VGS = -4.
5V) RDS(ON) < 90mΩ (VGS = -2.
5V) RDS(ON) < 110mΩ (VGS = -1.
8V) RDS(ON) < 130mΩ (VGS = -1.
5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.
 Switching application.
SOT-23 ORDERING INFORMATION Type No.
Marking BL3435 3435 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage ±8 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drai...


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