Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Electrostatic Sensitive Devices...
Production specification
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.8A RDS(ON) < 25mΩ (VGS = 10V)
RDS(ON) < 35mΩ (VGS = 4.5V)
Pb
Lead-free
BL3404
APPLICATIONS
N-channel enhancement mode effect
transistor. Switching application.
ORDERING INFORMATION
Type No.
Marking
BL3404
3404
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
30
VGSS ID
IDM PD
Gate -Source voltage Continuous Drain CurrentA
Pulsed Drain Current a Power Dissipation
±20
@ TA = 25 ℃ 5.8 @ TA = 70 ℃ 4.9 64
0.35
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units V V
A A W ℃
C202 Rev.A
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Production specification
N-Channel Enhancement Mode Field Effect
Transistor BL3404
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
STAT...