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BL2300

N-Channel Power Mosfet

Description

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb  VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free  VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A  Electrostatic Sensitive Devices. BL2300 APPLICATIONS  Power Management in Note book.  Portable Equipment.  Battery Powered Syst...

GME

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