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BL7N80F

GME
Part Number BL7N80F
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description N-Channel Power MOSFET FEATURES  7A, 800V, RDS(on)=1.9Ω@VGS =10V  High switching speed  100% avalanche tested Produc...
Datasheet PDF File BL7N80F PDF File

BL7N80F
BL7N80F

Overview
N-Channel Power MOSFET FEATURES  7A, 800V, RDS(on)=1.
9Ω@VGS =10V  High switching speed  100% avalanche tested Production specification BL7N80F ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 800 Unit V VGS Gate -Source Voltage ID Drain Current Continuous at IDM Drain Current(pulsed)Note1 TC=25℃ ±30 7 26.
4 V A A PD Power Dissipation 48 W EAS Avalanche Energy(Single Pulsed (Note 2)) 580 mJ EAR Avalanche Energy (Repetitive(Note 1)) 16.
7 mJ RθJA Thermal Resistance,Junction-to-Ambient 62.
5 ℃/W RθJC Thermal Resistance,Junction-to-Case 2.
6 ℃/W Tj Tstg Junction and StorageTemperature Range -55 to +150 ℃ Note...


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