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BL1N60F

GME
Part Number BL1N60F
Manufacturer GME
Description N-Channel Power MOSFET
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =9.3Ω@VGS = 10V. Pb ...
Datasheet PDF File BL1N60F PDF File

BL1N60F
BL1N60F

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =9.
3Ω@VGS = 10V.
Pb  Ultra Low gate charge (typical 5.
0nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 3.
0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL1N60F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 V Continuous Drain current TC=25℃ 1.
2 A ID Continuous Drain current TC=100℃ 0.
76 A EAS Single Pulse Avalanche Energy(Note3) 50 EAR Avalanche Energy,Repetitive(Not...


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