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BL15N30F

N-Channel Power MOSFET

Description

N-Channel Power MOSFET FEATURES  RDS(on) = 240 m　 (Typ.) @ VGS = 10 V, ID = 7.5 A  Low Gate Charge (Typ. 28 nC)  Low Crss (Typ. 17 pF)  100% Avalanche Tested  Improved dv/dt Capability  RoHS Compliant APPLICATIONS  Lighting  Uninterruptible Power Supply MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter VDS Drain-Source Volt...

GME

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