BL10N80F

10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free  Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )  Fast Switching Capability  Avalanche Energy Specified  Improved dv/dt Capability, High Ruggedness Production specification BL10N80F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 800 ±30 10 40 920 24 4.0 36 62.5 3.47 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃/W ℃ ℃ S074 Rev.A www.gmesemi.com 1 Production specification 10A,800V N-Channel Power Mosfet BL10N80F ELECTRICAL CHARACTERISTICS @ ...