BCP56

BCP56 BCP56 C E B C SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted BCP56 80 100 5 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic BCP56 PD RθJA Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1 8 125 W mW/°C °C/W Units *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ©1998 Fairchild Semiconductor Corporation Pr3947_REV A BCP56 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown...