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MJD2955

Part Number	MJD2955
Manufacturer	GME
Description	Epitaxial Planar NPN Transistor
Published	May 17, 2018
Detailed Description	Production specification Epitaxial Planar PNP Transistor FEATURES  Lead formed for surface mount Pb applications. ...
Datasheet	MJD2955 PDF File

Overview

Production specification Epitaxial Planar PNP Transistor FEATURES  Lead formed for surface mount Pb applications.
Lead-free  Straight lead.
 Electrically similar to popular MJE2955T.
 DC current gain specified to 10A.
APPLICATIONS  Low speed switching applications.
 D-PAK for surface mount applications.
MJD2955 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -10 A IB Base Current -6 A PC Collector Power Dissipation 1.
75 W Tj ,Tstg Junction and Storage temper...

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