HETC4379

REPLACEMENT TYPE : KTC4379 FEATURES  Low Saturation Voltage  High Speed Switching Time  Complementary to HEA1666 HETC4379(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 50 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 2 Collector Power Dissipation PC 500 Junction Temperature TJ 150 Storage Temperature Tstg -55~150 Unit V V V A mW °C °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=1mA,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA,IB=0 Emitter-Base Breakdown Voltage VEBO IE=1mA,IC=0 Collector Cut-off Current ICBO VCB=50V,IE=0 Emitter Cut-off Current IEBO VEB=5V,IC=0 DC Current Gain hFE(1) hFE(2) VCE=2V,IC=500mA VCE=2V,IC=1.5A Collector-Emitter Saturation Voltage Base-Emitter Voltage VCE(sat) VBE IC=1A ,...