HED965A

REPLACEMENT TYPE : 2SD965A HED965A(NPN) GENERAL PURPOSE TRANSISTOR FEATURES  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissipation and Current  Mini Power Type Package MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 20 Emitter-Base Voltage VEBO 7 Collector Current-Continuous IC 5 Collector Power Dissipation PC 750 Thermal Resistance From Junction to Ambient RθJA 167 Junction Temperature TJ 150 Storage Temperature Tstg -55 ~150 Unit V V V A mW °C/W °C °C SOT-89 MARKING: 965 1:BASE 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=10uA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA , IB=0 Emitter-Base Breakdown Voltage VEBO IE=10μA , IC=0 Collector Cut-off Current ICBO VCB=10V , IE=0 Emitter Cut-off Current IEB...