BCP54
Discrete POWER & Signal Technologies
BCP54
C
E C B
SOT-223
NPN General Purpose Amplifier
This device is desig...
BCP54
Discrete POWER & Signal Technologies
BCP54
C
E C B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
45 45 5.0 1.5 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
BCP54 1.5 12 83.3
Units
W mW/°C °C/W
ã 1997 Fairchild Semiconductor Corporation
BCP54
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emit...