BCP53T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCP53T1/D PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High Current: 1.5 Amps NPN Complement is BCP56 The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel. COLLECTOR 2,4 BCP53T1 Motorola Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 4 1 BASE 1 EMITTER 3 2 3 CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value – 80 –100 – 5.0 1.5 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C DEVICE MARKING AH THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.57...