BCP 51, BCP 52, BCP 53 PNP
General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial P...
BCP 51, BCP 52, BCP 53
PNP
General Purpose
Transistors
PNP
Surface mount Si-Epitaxial Planar
Transistors Si-Epitaxial Planar
Transistoren für die Oberflächenmontage Power dissipation – Verlustleistung
1.65
4
±0.2 ±0.3
6.5 ±0.1 3
±0.2
1.3 W SOT-223 0.04 g
Plastic case Kunststoffgehäuse
3.5
Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
1
0.7 2.3
2
3
3.25
Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E
Maximum ratings (TA = 25/C) BCP 51 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Koll.-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS 45 V 45 V
7
Grenzwerte (TA = 25/C) BCP 52 60 V 60 V 5V 1.3 W 1) 1A 1.5 A 200 mA 150/C - 65…+ 150/C BCP 53 80 V 100 V
Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 125/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat – – - ICB0 - ICB0 – –
Kennwerte (Tj = 25/C) Typ. – – – – Max. 100 nA 10 :A 100 nA 500 mV
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
1
) Mo...