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BFR106

Part Number	BFR106
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MH...
Datasheet	BFR106 PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR106 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR106 Marking Pin Configuration R7s 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage, TA = 25°C TA = -55°C Collector-emitter voltage ...

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